tsm301k12 20v p-channel mosfet with schottky diode 1/7 version: b11 t dfn 2 x 2 product summary v ds (v) r ds(on) (m ) i d (a) -20 94 @ v gs = -4.5v -2.8 131 @ v gs = -2.5v -2.3 185 @ v gs = -1.8v -0.54 schottky product summary v r (v) v f (v) i f (a) 20 0.5 2 features configuration with mosfet and low vf sky package low profile 0.75mm (typ) independent pin out for design flexibility application load switch for portable applications dc-dc buck circuit li-ion battery applications cellular charger switch ordering information part no. package packing tsm301k12cq rlg tdfn 2x2 3kpcs / 7 reel note: g denotes for halogen free mosfet absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current (note 1,2) i d -4.5 a pulsed drain current i dm -8 a maximum power dissipation t c =25 o c p d 6.5 w t a =25 o c (note 2) 1.56 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c schottky absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit reverse voltage v r 20 v average forward current (note 1,2) i f 2 a pulsed forward current i fm 5 a maximum power dissipation (note 1) t c =25 o c p d 6.8 w t a =25 o c (note 2) 1.47 w block diagram p-channel mosfet with schottky diode pin definition : 1. anode 6. cathode 2. nc 5. gate 3. drain 4. source
tsm301k12 20v p-channel mosfet with schottky diode 2/7 version: b11 thermal resistance ratings parameter symbol limit unit mosfet thermal resistance-junction to ambient t 5s r ? ja 80 o c/w steady state 120 o c/w schottky thermal resistance-junction to ambient t 5s r ? ja 85 o c/w steady state 130 o c/w notes: 1. surface mounted on 1 x 1 (2 oz) far4 board, 2. t 5s mosfet electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit static drain-source breakdown voltage v gs = 0v, i d = -250ua bv dss -20 -- -- v gate threshold voltage v ds = v gs , i d = -250a v gs(th) -0.5 -- -- v gate body leakage v gs = 12v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds =-20v, v gs = 0v i dss -- -- -1 a drain-source on-state resistance a v gs = -4.5v, i d = -2.8a r ds(on) -- -- 94 m v gs = -2.5v, i d = -2.3a -- -- 131 v gs = -1.8v, i d = -0.54a -- -- 185 diode forward voltage i s = -1.6a, v gs = 0v v sd -- -- -1.2 v dynamic b total gate charge v ds = -6v, i d = -2.8a, v gs = -5v q g -- 5.2 10 nc gate-source charge q gs -- 1.36 -- gate-drain charge q gd -- 0.6 -- input capacitance vgs=0v, vds=-6v, f =1.0mhz c iss -- 5.2 -- pf output capacitance c oss -- 9.7 -- reverse transfer capacitance c rss -- 19 -- switching c turn-on delay time vds=-15v, rd=15 , rg=6 , vgs=-10v t d(on) -- 29 -- ns turn-on rise time t r -- 295 -- turn-off delay time t d(off) -- 170 -- turn-off fall time t f -- 65 -- schottky electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit forward voltage drop i f = 1a v f -- -- 0.5 v maximum reverse leakage current v r = 5v i rm -- 0.015 0.08 ma v r = 20v -- 0.02 0.10 junction capacitance v r = 10v c t -- 60 -- pf notes: a. pulse test: pw 300s, duty cycle 2% b. for design aid only, not subject to production t esting. c. switching time is essentially independent of ope rating temperature.
tsm301k12 20v p-channel mosfet with schottky diode 3/7 version: b11 mosfet electrical characteristics curve (ta = 25 o c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current gate charge on-resistance vs. junction temperature source-drain diode forward voltage
tsm301k12 20v p-channel mosfet with schottky diode 4/7 version: b11 electrical characteristics curve (ta = 25 o c, unless otherwise noted) on-resistance vs. gate-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to -ambient
tsm301k12 20v p-channel mosfet with schottky diode 5/7 version: b11 schottky electrical characteristics curve (ta = 25 o c, unless otherwise noted) typical forward current derating curve typical instantaneous forward characteristics typical reverse characteristics typical junction capacitance maximum repetitive forward surge current
tsm301k12 20v p-channel mosfet with schottky diode 6/7 version: b11 tdfn 2x2 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code dim millimeters inches min max min max a 1.95 2.05 0.0768 0.0807 b 1.95 2.05 0.0768 0.0807 c 0.50 0.60 0.0197 0.0236 d 0.30 0.40 0.0118 0.0157 e 0.20 0.30 0.0079 0.0118 f 0.65 bsc 0.0256 bsc g 0.75 0.85 0.0295 0.0335 h 0.70 0.80 0.0276 0.0315 j -- 0.05 - 0.0020 k 0.195 0.211 0.0077 0.0083
tsm301k12 20v p-channel mosfet with schottky diode 7/7 version: b11 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any erro rs or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tscs terms and co nditions of sale for such products, tsc assumes no liability wh atsoever, and disclaims any express or implied warr anty, relating to sale and/or use of tsc products includi ng liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, cop yright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applica tions. customers using or selling these products for use i n such applications do so at their own risk and agr ee to fully indemnify tsc for any damages resulting from such i mproper use or sale.
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